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\section{Transistors}  GaAs NW have high charge carrier mobility, a desirable trait for devices such as microchips, which has historically been dominated by Si technology. Miao and coworkers have recently done record breaking work by creating GaAs NW arrays in planar (as opposed to typical vertical) form for T-gated high electron mobility transistors (HEMTs). The planar form all A 1.5x1.5 $cm^2$ chip with 115 planar HEMTS was fabricated via VLS templating  and characterized in terms of its DC current-voltage characteristics and radiofrequency radio frequency (RF)  performance. Testing found  a $\frac{f_t}{f_{max}}=\frac{33}{75}GHz$ and $\frac{I_{on}}{I^{off}}=10^4$ were found. Ther  DC $\frac{I_{on}}{I^{off}}=10^4$. The GaAs NW chip greatly outperfroms other  current and radio frequency (RF) performance NW, carbon nanotube, or graphene Field Effect Transistors (FET)  (Figure \ref{fig:best}).