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\section{Transistors}  GaAs NW have high charge carrier mobility, a desirable trait for devices such as microchips, which has historically been dominated by Si technology. Miao and coworkers have recently done record breaking work by creating GaAs NW arrays in planar (as opposed to typical vertical) form for T-gated high electron mobility transistors (HEMTs). A 1.5x1.5 $cm^2$ chip with 115 planar HEMTS was fabricated and characterized in terms of its DC current-voltage characteristics and radiofrequency performance. a $\frac{f_t}{f_{max}=33/75 GHz}$ $\frac{f_t}{f_{max}}=\frac{33}{75}GHz$  and $\frac{I_{on}}{I^{off}}}$ $\frac{I_{on}}{I^{off}}=10^4$  were found. Ther  DC current and radio frequency (RF) performance (Figure \ref{fig:best}).