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\section{Transistors}  GaAs NW have high charge carrier mobility, a desirable trait for devices such as microchips, which has historically been dominated by Si technology. Miao and coworkers have recently done record breaking work by creating GaAs NW arrays in planar (as opposed to typical vertical) form for T-gatedtransistors  high electron mobility transistors (HEMTs) that (HEMTs). These created HEMTs  outperform the best Field effect transistor (FET) currently designed with NW, carbon nanotubes, graphene.\cite{Miao_2014} DC current and radio frequency performance. \ref{fig:best} (RF) performance (Figure \ref{fig:best}). A $1.5x1.5 cm^2$