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\section{Transistors}  GaAs NW have high charge carrier mobility, a desirable trait for devices such as microchips, which has historically been dominated by Si technology. Miao and coworkers have recently done record breaking work by creating GaAs NW arrays in planar (as opposed to typical vertical) form for T-gated transistors high electron mobility transistors (HEMTs) that outperform the best Field effect transistor (FET) currently designed with NW, carbon nanotubes, graphene.\cite{Miao_2014} DC current and radio frequency performance. \ref{fig:}