deletions | additions       diff --git a/GaAs_have_been_synthesisze_with__.tex b/GaAs_have_been_synthesisze_with__.tex  index 71ee687..0107a6a 100644  --- a/GaAs_have_been_synthesisze_with__.tex  +++ b/GaAs_have_been_synthesisze_with__.tex 
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In addition to advances in understanding of VLS NW growth and ternary phase diagrams for GaAs NW growth in the past years an understanding of Au catalyzed GaAs NW shape (specifically facets) has also been achieved. The orientation and shape of NW facets determine the heterointerface of GaAs and hence its properties. Furthermore, Facet transformation has been reported as effecting growth rate and composition uniformity of NW shell during synthesis.\cite{Zheng_2013} A Reuleauxtriangle with three <112> curved surfaces is determined to be the actual shape at the growth site instead of the previously believed xxx.The crystal structure is thermodynamically unstable and changes to <112> facets in a polarity-driven Vapor solid growth mechanism that occurs simultaneously. When enough energy is supplied to overcome the activation barrier associated with facet change itt can also adopt <110> facets. Jiang and coworkers developed a model based on the VLS nucleation theory to explain these findings.\cite{Jiang_2014}  MOVPE is a technique that begins with 10–20 nm thick silicon dioxide film were used as substrates, being cleaned by dipping them in HF, blowing them dry with $N_{2}$ gas The synthesis was carried out at is very similar to the VLS described above. Au nanoparticles are deposited onto  a temperature semiconductor substrate surface to initiate growth  of $630 ^{\circ}C$, $arsenic As_{4}$ partial pressure between 3.510−7 vapor phase group (III)  and 2.310−6 mbar, a Ga rate from 0.12 group (V) precursors,such as $Ga(CH_{3})_{3}$ and $AsH_{3}$, are  provided  to 0.82 angstrom/s, the reaction chamber. During growth, these precursors pyrolyse (decompose)  to yield group III  and under rotation of 4 rpm. group V elements  Techniques of gold free synthesis has also been established. Ranging from MBE,