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Various growth parameters may be tuned to achieve specific NW shape. HCl has been used in Au catalyzed GaAs NW growth to suppress wurtzite like crystal growth in favor zince blende crystal structure growth. The Chlorine interacts wit the Ga species to prevent Ga to contributing to growth.\cite{Jacobsson_2014}   Axial and radial growth are the two directions of growth taking place during nanowire growth for MOVPE and VLS. Radial growth occurs when species are absorbed on the sidewalls of the nanowire. It is possible for these species to be further absorbed towards the Au catalyst causing them to be incorporated into the axial growth. "Tapering" of NW occur because the base of NW are exposed to precursors for longer times, and so grow for longer times. But also, adatoms can collect on the substrate which is where the base of the NW is located and so adatoms are likely to become absorbed onto the NW here.\cite{Dick_2006} I have already discussed how liquid catalyst radius determines NW radius, But I will now discuss how temperature, and flow rates of precursors effect NW properties. As temperautre is increased the rate precursor decomposition increases and the rate of available Ga increases as wel. With more Ga available the NW grows faster. But if temperature is continued to be increased the radial and axial growth rates compete, with radial growth rates out competing axial growth rates.\cite{Morral_2011}