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In addition to advances in understanding of VLS NW growth and ternary phase diagrams for GaAs NW growth in the past years, an understanding of Au catalyzed GaAs NW shape (specifically facets) has also been achieved. The orientation and shape of NW facets determine the heterointerface of GaAs and hence its properties. Furthermore, facet transformation has been reported as effecting growth rate and composition uniformity of NW shell during synthesis.\cite{Zheng_2013} A reuleauxtriangle with three \{112\}A curved surfaces is determined to be the actual shape at the growth site instead of the previously believed hexagonal surface. GaAs nanowires have \{112\} sidewall facets, but as the NW grows radially the faces transform into mostly \{110\} planes. Especially when enough energy is supplied to overcome the activation barrier associated with facet change, this explains why during annealing of the NW the facets adopt \{110\} facets. Jiang and coworkers developed a model based on the VLS nucleation theory to explain these findings.\cite{Jiang_2014}  Various growth parameters may be tuned to achieve specific NW shape. HCl has been used in Au catalyzed GaAs NW growth to suppress wurtzite like crystal growth in favor of  zince blende crystal structure growth. The Chlorine interacts with the Ga species to prevent Ga to contributing to growth.\cite{Jacobsson_2014} The growth of wurtzite GaAs NW with diameters on the order of tens of nanometers allows for the suppression of the number of stacking faults within the VLS growth, by exploiting the theoretical result that nanowires of small diameter (∼10 nm) adopt purely wurtzite structure and thicken via radial growth once the axial growth exceeds a certain length.\cite{Shtrikman_2009}