deletions | additions       diff --git a/GaAs_have_been_synthesisze_with__.tex b/GaAs_have_been_synthesisze_with__.tex  index 78cf861..c588799 100644  --- a/GaAs_have_been_synthesisze_with__.tex  +++ b/GaAs_have_been_synthesisze_with__.tex 
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GaAs have been synthesisze with radius as small as $1.5 nm$ using the laser ablation method.\cite{Duan_2000} Simplifying the ternary phase diagram of a GaAsM (M:Au,Ag,Cu) system to pseudo binary phase diagrams.\cite{Duan_2000}\cite{Panish_1967} conditions for growth were found to be $800-1030^{\circ}C$ $100-500 Torr$, $Ar:H_{2} (95:5)$ laser specs of (\lambda = 1064nm; 10Hz pulse; 2.5 W power)  Despite In addition to  advances in understanding of VLS NW growth and ternary phase diagrams for GaAs NW growth  in the past years an understanding of GaAs  NW shape (specifically facets) has also  been slow achieved. The orientation and shape of NW facets determine the heterointerface of GaAs and hence its properties. Furthermore, Facet transformation has been reported as effecting growth rate and composiiton uniformity of NW shell during synthesis.\cite{Zheng_2013}