Sergio Pineda edited Vapor_Liquid_Solid_growth_VLS__.tex  about 9 years ago

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\label {eq:vls_limit}  r_{min}=\frac{2\sigma_{LV}V_{L}}{RT \sigma}  \end{equation}  Using typical values of GaAs nanowire growth for equation \ref{eq:vls_limit} a limit of $2 \mu m$ is found. \cite{Hu_1999} Laser ablation can overcome the limitation of equilibrium clusters sizes to prepare catalyst clusters to subsequently produe nanowires via VLS.\cite{Morales_1998} The mechanism works as follows...A follows...First a phase diagram must be examine to find the conditions necessary for the catalyst to be in liquid phase and for the material to precipitate out. A  laser is used to ablate targets containing the desired elements and catalyst in a quartz furnace tube to control the temperature, pressure and residence time. The vapor phase species condenses into small clusters, then nanowire growth begins once the liquid becomes supersaturated and continus continues  as long as the nanoclusters remains in the liquid phase and stops when it is cooled. cooled.\cite{Morales_1998}  Over the past several years many methods for bulk nanowire synthesis has emerged, including laser ablation, template , solution.