deletions | additions       diff --git a/GaAs_have_been_synthesisze_with__.tex b/GaAs_have_been_synthesisze_with__.tex  index 0429db7..e97713b 100644  --- a/GaAs_have_been_synthesisze_with__.tex  +++ b/GaAs_have_been_synthesisze_with__.tex 
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GaAs have been synthesisze with radius as small as $1.5 nm$ using the laser ablation method.\cite{Duan_2000} Simplifying the ternary phase diagram of a GaAsM (M:Au,Ag,Cu) system to pseudo binary phase diagrams.\cite{Duan_2000}\cite{Panish_1967} conditions for growth were found to be $800-1030^{\circ}C$ $100-500 Torr$, $Ar:H_{2} (95:5)$ laser specs of (\lambda = 1064nm; 10Hz pulse; 2.5 W power)  In addition to advances in understanding of VLS NW growth and ternary phase diagrams for GaAs NW growth in the past years an understanding of Au catalyzed GaAs NW shape (specifically facets) has also been achieved. The orientation and shape of NW facets determine the heterointerface of GaAs and hence its properties. Furthermore, Facet transformation has been reported as effecting growth rate and composition uniformity of NW shell during synthesis.\cite{Zheng_2013} A Reuleauxtriangle with three <112>A <112>  curved surfaces is determined to be the actual shape at the growth site.The site instead of the previously believed xxx.The  crystal structure is thermodynamically unstable and changes to {112} <112>  facets in a polarity-driven Vapor solid growth mechanism that occurs simultaneously. When enough energy is supplied to overcome the activation barrier associated with facet change itt can also adopt {110} <110>  facets. Jiang and coworkers developed a model based on the VLS nucleation theory to explain these findings.\cite{Jiang_2014} Techniques of gold free synthesis has also been established. Ranging from MBE, MOVPE. 10–20 nm