deletions | additions       diff --git a/In_addition_to_advances_in__.tex b/In_addition_to_advances_in__.tex  index 60b0412..b5b3232 100644  --- a/In_addition_to_advances_in__.tex  +++ b/In_addition_to_advances_in__.tex 
...
In addition to advances in understanding of VLS NW growth and ternary phase diagrams for GaAs NW growth in the past years, an understanding of Au catalyzed GaAs NW shape (specifically facets) has also been achieved. The orientation and shape of NW facets determine the heterointerface of GaAs and hence its properties. Furthermore, facet transformation has been reported as effecting growth rate and composition uniformity of NW shell during synthesis.\cite{Zheng_2013} A reuleauxtriangle with three \{112\}A curved surfaces is determined to be the actual shape at the growth site instead of the previously believed hexagonal surface \{111\}.The crystal structure changes to a more favorable surface. GaAs nanowires have  \{112\} facets in a polarity-driven vapor solid growth mechanism, involving ... . When sidewall facets, but as the NW grows radially the faces transform into mostly \{110\} planes. Especially when  enough energy is supplied to overcome the activation barrier associated with facet change, this explains why  during annealing of the NW, it can also NW the facets  adopt \{110\} facets. Jiang and coworkers developed a model based on the VLS nucleation theory to explain these findings.\cite{Jiang_2014} Various growth parameters may be tuned to achieve specific NW shape. HCl has been used in Au catalyzed GaAs NW growth to suppress wurtzite like crystal growth in favor zince blende crystal structure growth. The Chlorine interacts wit the Ga species to prevent Ga to contributing to growth.\cite{Jacobsson_2014}   Axial and radial growth are the two directions of growth taking place during nanowire growth for MOVPE and VLS. Radial growth occurs when species are absorbed on the sidewalls of the nanowire. It is possible for these species to be further absorbed towards the Au catalyst causing them to be incorporated into the axial growth. "Tapering" of NW occur because the base of NW are exposed to precursors for longer times, and so grow for longer times. But also, adatoms can collect on the substrate which is where the base of the NW is located and so adatoms are likely to become absorbed onto the NW here.\cite{Dick_2006}  I have already discussed how liquid catalyst radius determines NW radius, But I will now discuss how temperature, and flow rates and partial pressures of precursors effect NW properties. As temperautre temperature  is increased the rate of  precursor decomposition increases and the rate of available Ga increases as wel. well.  With more Ga available the NW grows faster. But if temperature is continued to be increased the radial and axial growth rates compete, with radial growth rates out competing axial growth rates.\cite{Morral_2011} Radial growth can be kinetically suppressed by low growth temperatures, and this helps to achieve more uniform NW.  Axial and radial growth rates increas increase  with increasing As precursors, but at a 40 As:Ga ratio the increase stops. In fact growht growth  rate decrease and some believe it its because trimers begin to form on the \{111\}B surface, impeding growth. growth on the axial direction.  \cite{Morral_2011}