deletions | additions       diff --git a/GaAs_have_been_synthesisze_with__.tex b/GaAs_have_been_synthesisze_with__.tex  index 6b931d0..03ee325 100644  --- a/GaAs_have_been_synthesisze_with__.tex  +++ b/GaAs_have_been_synthesisze_with__.tex 
...
GaAs have been synthesisze with radius as small as $1.5 nm$ using the laser ablation method.\cite{Duan_2000} Simplifying the ternary phase diagram of a GaAsM (M:Au,Ag,Cu) system to pseudo binary phase diagrams.\cite{Duan_2000}\cite{Panish_1967} conditions for growth were found to be $800-1030^{\circ}C$ $100-500 Torr$, $Ar:H_{2} (95:5)$ laser specs of (\lambda = 1064nm; 10Hz pulse; 2.5 W power)  In addition to advances in understanding of VLS NW growth and ternary phase diagrams for GaAs NW growth in the past years, an understanding of Au catalyzed GaAs NW shape (specifically facets) has also been achieved. The orientation and shape of NW facets determine the heterointerface of GaAs and hence its properties. Furthermore, Facet transformation has been reported as effecting growth rate and composition uniformity of NW shell during synthesis.\cite{Zheng_2013} A reuleauxtriangle with three [112] curved surfaces is determined to be the actual shape at the growth site instead of the previously believed hexagonal surface [111].The crystal structure is thermodynamically unstable and changes to [112] facets in a polarity-driven vapor solid growth mechanism that occurs simultaneously. When enough energy is supplied to overcome the activation barrier associated with facet change it can also adopt [110] facets. Jiang and coworkers developed a model based on the VLS nucleation theory to explain these findings.\cite{Jiang_2014}  MOVPE is a technique that is very similar to the VLS described above. Au nanoparticles are deposited onto a semiconductor substrate surface to initiate growth of vapor phase group (III) and group (V). Precursors,such as $Ga(CH_{3})_{3}$ and $AsH_{3}$, are used to decompose to the elements necessary to make the GaAs NW.\cite{Joyce_2011} \cite{Stringfellow_1999} After annealing the substrate to rid it of impurities it is cooled to between 350 and $550^{\circ}C$. The group V flow rate is adjusted for growth and the group III precursors are fed to the reaction chamber to initiate growth. Growth times are generally between 30 seconds and 120 min, chosen according to the growth rate and the desired nanowire length. Upon completion of growth, the samples are cooled under group V overpressure.\cite{Joyce_2011}