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Semiconductor nanowires (NW) are becoming increasingly important due to their interesting properties and potential applications thereof in fields such as electronics and opto-electronics. In order for applications in these fields to be successful there must be synthetic control of NW quality; including, Including,  synthetic control of phase puritiy, chemical composition, surface:volume ratio, and NW length, NW diameter, and NW shape. All these NW attributes consequently control the NW properties that are of interest, and even small variations or inconsistencies can have large effects on NW performance. This article reviews the methods of Gallium Arsenide (GaAs) nanowire synthesis and new insight into of the shape, structure,  mechanism of formation formation,  and structure of the resultant NW. controllable growth parameters for tunable NW structure.  The topics to be reviewed include are divided into two sections,  the mechanisms and principles of Au catalyzed first encompassing gold dependent  synthesis by VLS and MOVEPE, methods,  the morphology and crystallographic structure of the NW due to particular synthesis techniques, and controllable growth parameters for tunable NW structure. second, gold independent synthesis.