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Semiconductor nanowires (NW) are becoming increasingly important due to their interesting properties and potential applications thereof in fields such as electronics and opto-electronics. In order for applications in these fields to be successful there must be synthetic control of NW quality; Including, synthetic control of phase puritiy, chemical composition, surface:volume ratio, and NW length, NW diameter, and NW shape. All these NW attributes consequently control the NW properties that are of interest, and even small variations or inconsistencies can have large effects on NW performance. This article reviews the methods of Gallium Arsenide (GaAs) nanowire synthesis and new insight intoof  the shape, structure, mechanism of formation, and controllable growth parameters for tunable NW structure. The topics to be reviewed are divided into two sections, the first encompassing gold dependent synthesis methods, the second, gold independent synthesis.