Sergio Pineda edited Alloying_can_be_complex_to__.tex  about 9 years ago

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Gas Source Molecular Beam Epitaxy (GS-MBE) coupled with self assembled Au particles has been successfully used to grow GaAs nanowires.\cite{Plante_2006}. Briefly, GS-MBE works as follows...Samples are carefully prepared so that a clean single crystal face is oriented towards the beam source. The beam source is then placed at a sufficient distance to allow uniform deposition onto the surface and the growth rates of the NW depend on the flux of gas used and formation rate of clusters.\cite{9780199544219} The mechanism of Nanowire growth reveals that the role of the Au catalyst is different than that described above for VLS and MOCVD. MBE GaAs nanowire growth was studied as a function of temperature, As:Ga ratio, Au seed particle size (20-800nm), revealing two main mechanism with different rates of nanowire formation.\cite{Plante_2006} For Au droplet catalyst below the diameter size of 105-130nm, the height of the wire is driven by the diffusion of Ga/As gas from the walls up to the tip of the wire. For catalyst with diameters greater than 103nm, bulk diffusion through the metal catalyst is responsible for nanowire growth.\cite{Plante_2006}  Bulk synthesis of GaAs include an electrodeposition "electrodeposition  of gold particles particles"  method. While Au catalyst have been used in evaporated, aerosol and colloid particle forms, these methods make it challenging to grow NW in a pattern, making the techniques less dependable for high redproducibility and consistency. Electrodeposition in conjunction with lithography has succesfully been used to produce nanoscale patterns.\cite{Jafari_Jam_2015} The method works as follows...nanoimprint lithography is used to define a pattern, pattern on a substrate with resist,  resist residues were removed by ion etching, electrodeposition (a process that uses electric current to reduce dissolved gold metal cations so that they form a coherent metal coating on the electrode's exposed parts) occurs by placing the patterned substrate/resist wafer into a solution of gold, after gold deposition resist stripping is finished so that only the substrate and gold pattern are left.\cite{Jafari_Jam_2015} Advantages (compared to other methods such as thermal evaporationg) evaporation)  include higher throughput, and reduced gold consumption by a factor of 300.