Sergio Pineda edited In_addition_to_advances_in__.tex  about 9 years ago

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Various growth parameters may be tuned to achieve specific NW shape. HCl has been used in Au catalyzed GaAs NW growth to suppress wurtzite like crystal growth in favor zince blende crystal structure growth. The Chlorine interacts wit the Ga species to prevent Ga to contributing to growth.\cite{Jacobsson_2014}   The growth of wurtzite GaAs NW with diameters on the order of tens of nanometers allows for the suppression of the number of stacking faults within the VLS growth, by exploiting the theoretical result that nanowires of small diameter (∼10 nm) adopt purely wurtzite structure and thicken via radial growth once the axial growth exceeds a certain length.  Axial and radial growth are the two directions of growth taking place during nanowire growth for MOCVD and VLS. Radial growth occurs when species are absorbed on the sidewalls of the NW. It is possible for these species to be further absorbed towards the Au catalyst causing them to be incorporated into the axial growth. "Tapering" of NW occur because the base of NW are exposed to precursors for longer times, and so grow for longer times. But also, adatoms can collect on the substrate which is where the base of the NW is located and so adatoms are likely to become absorbed onto the NW here.\cite{Dick_2006}  I have already discussed how liquid catalyst radius determines NW radius, But I will now discuss how temperature, and flow rates and partial pressures of precursors effect NW properties. As temperature is increased the rate of precursor decomposition increases and the rate of available Ga increases as well. With more Ga available the NW grows faster. But if temperature is continued to be increased the radial and axial growth rates compete, with radial growth rates out competing axial growth rates.\cite{Morral_2011} Radial growth can be kinetically suppressed by low growth temperatures, and this helps to achieve more uniformly long NW.\cite{Joyce_2007} Axial and radial growth rates increase with increasing As precursors, but at a 40 As:Ga ratio the increase stops. In fact growth rate decrease and some believe it its because trimers begin to form on the \{111\}B surface, impeding growth on the axial direction. \cite{Morral_2011}