deletions | additions       diff --git a/section_Gold_Free_synthesis_Despite__.tex b/section_Gold_Free_synthesis_Despite__.tex  index b1a34a8..c5a2084 100644  --- a/section_Gold_Free_synthesis_Despite__.tex  +++ b/section_Gold_Free_synthesis_Despite__.tex 
...
"Gallium assisted growth" is also similar to VLS (Ga playing the role of Au).\cite{Morral_2011} The growth condition are chosen by again analyzing a phase diagram to create a situation in which Ga liquid is in equilibrium with solid GaAs (this temperature is called the "congruent temperature" and was found to be $630^{\circ}C$)\cite{Chatillon_1995}. Arsenic adatoms (atoms "on top of" the crystal surface plane) diffuse into the Ga liquid droplet to form the GaAs NW, and these adatoms can be deposited via MBE, or MOVPE.  Selective area epitaxy is yet another method of nanowire growth. A substrate is covered by a film such that nanowire reactant will not "stick" to them. Then the desired nanoscale patterned is place via lithography which removes the non-reactive film and exposes the substrate for nanowire growth. Conditions to insure that atoms wo will  not stick to the film are chosen, and nanowires but will  grow on the left over pattern.\cite{Morral_2011} exposed substrate are chosen.\cite{Morral_2011}  Studies have shown that the geometry of the NW growth change during growth based on location on the substrate relative to other nanowires.\cite{Bassett_2015}