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\section{Nanowire Crystal Structure and Growth parameters}  GaAs typically adopt Cubic zince blende (ZB) structure or hexagonal wurzite (WZ) structure. \cite{Glas_2007} Each crystal structure is responsible for different properties of the NW.\cite{Zhou_2014} Each crystal structure is composed by staking bilayers, the ZB has a ABCABC stacking sequence and WZ have a ABABAB stakcing sequence.\cite{Morral_2011} WZ nanowires form hexagonal prism. When GaAs NW have diameters below 40 nm the WZ structure is adopted, and for diameters greater than 40 nm teh the  ZB structure tends to be adopted\cite{Shtrikman_2009} Two of the most common defects that are observed are "twinning" (two or more intergrown crystals are formed in a symmetrical fashion), and stacking fault (SF) are incorrect stacking of crystal planes. \cite{Andr__2014}