Extended alpha-power model for Submicron CMOS for Analog Design Abstract: This work proposes a new model to capture short-channel effects of Depp-Submicron CMOS deices used in modern CMOS technology. It is an extended version of alpha-power model which is proposed to overcome the limitations of square-law model widely used by the designers even today at the bebginig state of any design. In analog design, the parameters of more interest are \(g_m\) and \(g_ds\). In this paper, we propose to use \(\beta\) power model to capture the output impedance of the transistor.