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Nikolay Plusnin · Created · Last updated about 1 year ago ·
I '64. At the moment I am chief researcher at the Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences (IACP). I have a degree of Doctor (Professor) of physical and mathematical sciences and scientific rank (title) of associate professor, assigned to the Russian Higher Attestation Commission (HAC). For many years I served as head of the laboratory of technology of metal-semiconductor system and then laboratory of quantum-size heterosystem (http://www.iacp.dvo.ru/english/structure/subdiv/fkg.html) in the IACP. In addition, I served as professor and dean of the Faculty of Vladivostok State University of Economics and Service (VSUES). I was a visiting professor at Tohoku University (Japan, Sendai) and the Institute of Physics of Microstructures (Germany, Halle).
For more than 35 years I have studied the physics-chemical processes at the interface of the transition metal - semiconductor (silicon, silicide) during epitaxial growth of ultrathin layers with thickness from one monolayer to tens of monolayers. I developed new technique for low-temperature molecular beam epitaxy (MBE) of ultrathin layers (I have patents). I have more than 50 scientific papers (see, e.g. http://elibrary.ru.sci-hub.org/author_items.asp ) . I know techniques of analysis for: Auger - electron spectroscopy (AES), energy l