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\begin{document}

\title{\selectlanguage{greek}β-\selectlanguage{english}Ga2O3 HEMT for RF and High Power Nanoelectronics\selectlanguage{english}}



\author[1]{Rajan Singh }%
\author[2]{Trupti Lenka }%
\author[1]{Hieu Nguyen }%
\affil[1]{Affiliation not available}%
\affil[2]{National Institute of Technology Silchar}%


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  \date{May 18, 2024}


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\begin{abstract}
In this paper, we report record DC and RF performance in
\selectlanguage{greek}β-\selectlanguage{english}Ga\textsubscript{2}O\textsubscript{3} High Electron Mobility
Transistor (HEMT) with field-plate T-gate using 2-D simulations. The T
gate with head-length L\textsubscript{HL} of 180 nm and foot-length
L\textsubscript{FL} of 120 nm is used in the highly scaled device with
an aspect ratio (L\textsubscript{G}/t\textsubscript{barrier}) of
\textasciitilde{} 5. The proposed device takes advantage of a highly
polarized Aluminum Nitride (AlN) barrier layer to achieve high
Two-Dimensional Electron Gas (2DEG) density in the order of 2.3 \selectlanguage{ngerman}×
10\textsuperscript{13} cm\textsuperscript{-2}, due to spontaneous as
well as piezoelectric polarization components. In the depletion mode
operation, maximum drain current I\textsubscript{D,MAX} of 1.32 A/mm,
and relatively flat transconductance characteristics with a maximum
value of 0.32 S/mm are measured. The device with source-drain distance
L\textsubscript{SD} of 1.9 \selectlanguage{greek}µ\selectlanguage{english}m exhibits record low specific-on resistance
R\textsubscript{ON,sp} of 0.136 m-cm\textsuperscript{--2}, and
off-state breakdown voltage of 403 V, which correspond to the record
power figure-of-merit (PFoM) of \textasciitilde{} 1194
MW/cm\textsuperscript{2}. Additionally, current gain cut-off frequency
f\textsubscript{T} and maximum oscillation frequency
f\textsubscript{MAX} of 48 and 142 GHz are estimated. The obtained
results show the potential of Ga\textsubscript{2}O\textsubscript{3} HEMT
for futuristic power devices.%
\end{abstract}%



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