Determination of Carrier Density through Hall Measurements and Determination of Transition Temperature (\(Tc\)) in a High-Tc Superconductor

Abstract

Aims

The Hall Effect is an important part of finding out about charge transport in a material.In this experiment, we aim to determine the charge density in Ge n-type, Ge p-type semiconductor samples, and in a Ag (silver) sample. We will also be determining the transition temperature (\(Tc\)) of the high-Tc superconductor \(Bi_2 Sr_2 Ca_2 Cu_3 O_{10}\) (aka \(Bi2223\)).

Introduction

Hall Effect was discovered by Edwin Herbert Hall, an American physicists, in 1879. This phenomenon can be used to determine the sign of the charge carrier in electrical conductors such as semiconductors and superconductors. The fundamental idea of Hall Effect can be illustrated in Figure \ref{fig:HallIllustration}: