FIGURE 2 Contact resistivity values of SrF2/Al stack associated with n-Si measured by the TLM. (A) The dark current-voltage measurement was performed on a structure consisting of a 1.5 nm SrF2 film deposited on 1-3 Ω·cm lightly doped n-type c-Si and an Al layer. . (B)The contact resistance of the structure was measured for various thicknesses of SrF2 film, and the effect of storage time in the air was also examined.