FIGURE 2 Contact resistivity values of SrF2/Al
stack associated with n-Si measured by the TLM. (A) The dark
current-voltage measurement was performed on a structure consisting of a
1.5 nm SrF2 film deposited on 1-3 Ω·cm lightly doped
n-type c-Si and an Al layer. . (B)The contact resistance of the
structure was measured for various thicknesses of SrF2 film, and the
effect of storage time in the air was also examined.