2. Numerical modeling and material parameter
Simulation of a SnS thin-film photovoltaic solar cell has been done in the present work, using the SCAPS-1D program (Solar Cell Capacitance Simulator) to model the capacitance-frequency (C-f) characteristics of this cell. SCAPS has been used to model several thin-film photovoltaic solar cells devices such as CdTe [17, 18] CGIS [19, 20] CZTS [21, 22] CZTSe [23] Cu2FeSnS4(CFTS) [24] CuNiSnS4 (CNTS)[25] MASnI3 [26] SnS [27, 28]. SCAPS solves the various equations of semiconductors of a single variable, we find the most important the poisson equation (1) and the equation of continuity of holes and electrons (2, 3) [29, 30] SCAPS-1D simulates device operation by considering the Shockley-Read-Hall (SRH) recombination statistics.
The present study is devoted to the structure of a solar cell composed of ZnO/CdS/CIGS/Si, such that CIGS plays a role of an absorbing layer and CdS used as a buffer layer and the oxide transparent ZnO is a window layer Fig.1 , Hanif et al [27]. have optimized the different parameters of this cell such as the thickness of n-CdS and p-SnS, acceptors density NA and donors density ND, that is to say the influence of these parameters on the characteristics of the cells (η, Voc, Jsc, FF) using SCAPS-1D simulator. In this simulation uses the composite material parameters of the cell shown in Table 1 [24, 31].
Table 1: parameters used in the simulation