2. Numerical modeling and material parameter
Simulation of a SnS thin-film photovoltaic solar cell has been done in
the present work, using the SCAPS-1D program (Solar Cell Capacitance
Simulator) to model the capacitance-frequency (C-f) characteristics of
this cell. SCAPS has been used to model several thin-film photovoltaic
solar cells devices such as CdTe [17, 18] CGIS [19, 20] CZTS
[21, 22] CZTSe [23] Cu2FeSnS4(CFTS) [24] CuNiSnS4 (CNTS)[25] MASnI3 [26] SnS [27,
28]. SCAPS solves the various equations of semiconductors of a single
variable, we find the most important the poisson equation (1) and the
equation of continuity of holes and electrons (2, 3) [29, 30]
SCAPS-1D simulates device operation by considering the
Shockley-Read-Hall (SRH) recombination statistics.
The present study is devoted to the structure of a solar cell composed
of ZnO/CdS/CIGS/Si, such that CIGS plays a role of an absorbing layer
and CdS used as a buffer layer and the oxide transparent ZnO is a window
layer Fig.1 , Hanif et al [27]. have optimized the different
parameters of this cell such as the thickness of n-CdS and p-SnS,
acceptors density NA and donors density
ND, that is to say the influence of these parameters on
the characteristics of the cells (η, Voc,
Jsc, FF) using SCAPS-1D simulator. In this simulation
uses the composite material parameters of the cell shown in Table 1
[24, 31].
Table 1: parameters used in the simulation