Fig 3 Measure performance of the SPST switch. (a) Compare with
simulation results, measured and de-embedded insertion loss and
isolation from 210 GHz to 230 GHz, (b) Measured insertion loss and
isolation versus input power at 220 GHz.
The power measurements of the switches were tested at 220 GHz using an
external power source and power meter. Through the external power
source’s adjustable attenuation, the input power value is changed. Due
to the loss of the quartz probe and the gold wire, the actual power fed
into the switch chip is reduced, which is compensated by increasing the
external input power. Figure 3(b) plots the processed output power
against switch insertion loss and isolation measurements. When the input
power reaches 17dBm, the isolation is significantly reduced by 1dB.
Conclusion: This letter provides an example of a high-frequency
switch with minimal insertion loss and high isolation that was made
using GaAs PIN diodes. To enhance the switch’s functionality, three PIN
diodes are connected in parallel on the transmission line. This work’s
SPST switch exhibits insertion loss performance of < 3.2 dB,
isolation performance of >29 dB from 220 GHz to 230 GHz,
and IP1dB performance of 17 dBm at 220 GHz. The switch of this work can
be applied to high-power applications such receiving protection systems.
Acknowledgments: This work was supported by the National Key
Research and Development Program of China under Contract No.
2021YFB3200100 (Y.Z.) and No. 2018YFB1801503 (Y.Z.) ,and the National
Natural Science Foundation of China under Contract No. 61931006 (Y.Z.).
2022 The Authors. Electronics Letters published by John Wiley
& Sons Ltd on behalf of The Institution of Engineering and Technology
This is an open access article under the terms of the Creative Commons
Attribution License, which permits use, distribution and reproduction in
any medium, provided the original work is properly cited.
Received: xx January 2021 Accepted: xx March 2021
doi: 10.1049/ell2.10001
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