aFOM from [1]: ns/(um.V).
Table 1 shows the comparison of HV level shifters. In [1] and
[4], the large positive dV/dt immunity and infinite negativedV/dt immunity are achieved under tens of voltages supply
voltage. As the power supply voltage increases, dV/dt noise
interference also gradually increases. Then, dV/dt immunity
technologies applied in the LV field is no longer applicable. In
[3], the HV level shifter realizes the 200V/ns dV/dt immunity
under a 200V power supply. However, the special process, SOI process, is
used in [3]. In this paper, the proposed level shifter can shield
both positive and negative dV/dt noise, and infinite dV/dtimmunity, which is not influenced by processes and power supply
voltages. At the same time, FOM is used to evaluate the HV level
shifter’s response speed. In Table I, the proposed HV level shifter has
the smallest FOM. Therefore, the proposed level shifter can still
achieve the enough response speed under the 400V power supply.
Conclusion: This paper proposes the HV level shifter withdV/dt noises shielding function. The dV/dt noise is
shielded by logic gates without the use of complex auxiliary circuits.
Therefore, the proposed level shifter’s dV/dt noise immunity
tends to infinity and is not affected by the supply voltage and process
size. Simulation results of dV/dt immunity and delay time are
implemented in a 0.5µm BCD process, realizing the dV/dt noise
shielding function and no more than 1.5ns delay time under a 400V power
supply. The proposed level shifter solves the problem that the supply
voltage and process sizes could weaken the existing technologies to
improve dV/dt immunity.
Acknowledgments: This work was supported by the National Natural
Science Foundation of China under Grant No. 62074028and No. 61674025.
Funding information : National Natural Science Foundation of China
under Grant No. 62074028and No. 61674025.
Conflict of interest : None.
Data availability statement : Not applicable.
2022 The Authors. Electronics Letters published by John Wiley
& Sons Ltd on behalf of The Institution of Engineering and Technology.
This is an open access article under the terms of the Creative Commons
Attribution License, which permits use, distribution and reproduction in
any medium, provided the original work is properly cited.
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