aFOM from [1]: ns/(um.V).
Table 1 shows the comparison of HV level shifters. In [1] and [4], the large positive dV/dt immunity and infinite negativedV/dt immunity are achieved under tens of voltages supply voltage. As the power supply voltage increases, dV/dt noise interference also gradually increases. Then, dV/dt immunity technologies applied in the LV field is no longer applicable. In [3], the HV level shifter realizes the 200V/ns dV/dt immunity under a 200V power supply. However, the special process, SOI process, is used in [3]. In this paper, the proposed level shifter can shield both positive and negative dV/dt noise, and infinite dV/dtimmunity, which is not influenced by processes and power supply voltages. At the same time, FOM is used to evaluate the HV level shifter’s response speed. In Table I, the proposed HV level shifter has the smallest FOM. Therefore, the proposed level shifter can still achieve the enough response speed under the 400V power supply.
Conclusion: This paper proposes the HV level shifter withdV/dt noises shielding function. The dV/dt noise is shielded by logic gates without the use of complex auxiliary circuits. Therefore, the proposed level shifter’s dV/dt noise immunity tends to infinity and is not affected by the supply voltage and process size. Simulation results of dV/dt immunity and delay time are implemented in a 0.5µm BCD process, realizing the dV/dt noise shielding function and no more than 1.5ns delay time under a 400V power supply. The proposed level shifter solves the problem that the supply voltage and process sizes could weaken the existing technologies to improve dV/dt immunity.
Acknowledgments: This work was supported by the National Natural Science Foundation of China under Grant No. 62074028and No. 61674025.
Funding information : National Natural Science Foundation of China under Grant No. 62074028and No. 61674025.
Conflict of interest : None.
Data availability statement : Not applicable.
 2022 The Authors. Electronics Letters published by John Wiley & Sons Ltd on behalf of The Institution of Engineering and Technology. This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
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