The device tests were then carried out for a VDS-tunning demonstration. In Figure \ref{234487}c, the device current (IDS) can be defined as the vitality of the neuron, where the red face means happy, the yellow face means mid and the blue face means sad. The pre-synaptic current value increases from 0.2 nA to 30 nA (sad, mild, and happy) when the VDS increases from 0.1 V to 25 V, suggesting the VDS can be used to modulate the “vitality” of our device. As shown in Figure \ref{234487}d, 10 consecutive light spikes (0.3 s, 50 μW/cm2) were applied to the device with various VDS (different emotions, sad, mild, happy). The change of the device EPSC is enhanced with the increment of the VDS and the device at the VDS of -25 V exhibits the largest EPSC change (Figure \ref{369822}e), while the level of the VDS would not change the amplification of the conductance change in the first spike (inset, Figure \ref{234487}e). When a human was sad (negative emotion, low VDS), the synapse displays a low steady signal and low responsivity, resulting in a low A10/A1 ratio. Humans under positive emotions can efficiently process the information and enhance memory. A high A10/A1 ratio was observed in our neuromorphic device under high VDS (happy) after 10 light spikes (Figure \ref{234487}f). With the increase of the applied VDS, the change of the channel conductance was enhanced because more photo-generated holes accumulated in the pentacene channel (Figure \ref{234487}g). The photo-induced holes are hard to recombine with the electrons under large VDS because of the large energy-band bending in the junction of pentacene/2D MOF-PMMA. The electrons trend to be trapped in 2D MOF and the holes trend to accumulate in pentacene, which resulst in high conductance and long retention time. In Figure 3h, the current variations after 100 s were extracted under various VDS. The super-linear enhancement of the EPSC current with the increasing VDS can be observed. The above results show that the VDS can effectively control the photo-response performance and the synaptic behavior of our device, which provides the promising platform for multi-function synaptic simulation. The above results show the VDS-tunable neuromorphic performance of the device was successfully achieved.