Figure S11. Cycle-to-cycle variation of the VO2memristor under different temperatures. a-l) I-V characteristics
of the VO2 device in 50 repeated cycles under different
temperatures (284-306 K). m)
Cumulative plots of V th in the 50 repeated
cycles. n) Cumulative plots of V hold in the 50
repeated cycles.
Figure S11a-l show the I-V characteristics of the
VO2 device in 50 repeated cycles under different
temperatures, showing excellent cycle-to-cycle uniformity under each
temperature. The cycle-to-cycle fluctuations inV th and V hold are further
plotted in Figure S11m,n, which once again demonstrates very low
cycle-to-cycle variation.