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\begin{document}

\title{Supporting Information for~``Artificial Multisensory Neuron with Fused
Haptic and Temperature Perception for Multimodal In-Sensor Computing''}



\author[1]{Qingxi Duan}%
\author[1]{Teng Zhang}%
\author[1]{Chang Liu}%
\author[1]{Rui Yuan}%
\author[1]{Ge Li}%
\author[1]{Pek Jun Tiw}%
\author[1]{Ke Yang}%
\author[1]{Chen Ge}%
\author[1]{Yuchao Yang}%
\author[1]{Ru Huang}%
\affil[1]{Affiliation not available}%


\vspace{-1em}



  
  \date{May 17, 2024}


\begingroup
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\sloppy


\emph{}\textbf{}

\emph{\textsuperscript{}}\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image12/image12}

\end{center}
\end{figure}

\textbf{Figure S1. Chemical characterization of a
VO\textsubscript{2}memristive device.} Energy-dispersive spectroscopic
(EDS) elemental line-scan of a VO\textsubscript{2} device.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image13/image13}

\end{center}
\end{figure}

\textbf{Figure S2. Transient switching response of the
VO\textsubscript{2} memristor.} a) Current waveform (orange curve) of
the VO\textsubscript{2} memristor upon application of the voltage
waveform (blue curve). b) The switching speed is \textless{}120 ns from
off- to on-state. c) The switching speed is \textless{}50 ns from on to
off state.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image14/image14}

\end{center}
\end{figure}

\textbf{Figure S3.} The \emph{I-V} characteristics of
VO\textsubscript{2} memristor without compliance current.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image15/image15}

\end{center}
\end{figure}

\textbf{Figure S4. Endurance of the VO\textsubscript{2} memristor.}
a)\emph{I-V} characteristics after 1, 10\textsuperscript{2},
10\textsuperscript{3}, 10\textsuperscript{4}, 10\textsuperscript{5},
10\textsuperscript{6} cycles during endurance test. b) The endurance
test results with the oscillator method after 1, 10\textsuperscript{2},
10\textsuperscript{3}, 10\textsuperscript{4}, 10\textsuperscript{5},
10\textsuperscript{6} cycles.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image16/image16}

\end{center}
\end{figure}

\textbf{Figure S5. Cycle-to-cycle variation of the
VO\textsubscript{2}memristor} . a) Cumulative plots of\emph{V}
\textsubscript{th}, \emph{V} \textsubscript{hold} of
\emph{I-V}characteristics with 100 repeated cycles in Figure 2g. b)
Distributions of high and low resistance states of the
VO\textsubscript{2} memristor with 100 repeated cycles in Figure 2g.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image17/image17}

\end{center}
\end{figure}

\textbf{Figure S6. Device-to-device variation of the
VO\textsubscript{2}memristor} . a) \emph{I-V} characteristics of the
device measured in 10 different VO\textsubscript{2} devices. b)
Distributions of\emph{V} \textsubscript{th}, \emph{V}
\textsubscript{hold} with 50 repeated \emph{I-V} cycles in 10
VO\textsubscript{2} devices. c) Distributions of high and low resistance
states with 50 repeated\emph{I-V} cycles in 10 VO\textsubscript{2}
devices.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image18/image18}

\end{center}
\end{figure}

\textbf{Figure S7. The} \textbf{experimental setup for Braille
character} \textbf{recognition.} a) The entire experimental setup. b)
The probe station used for testing VO\textsubscript{2} memristor. c) The
piezoresistive sensors connected series with the
VO\textsubscript{2}memristor.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image19/image19}

\end{center}
\end{figure}

\textbf{Figure S8.} Stability of the piezoresistive sensor in response
to 200 g weight.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image20/image20}

\end{center}
\end{figure}

\textbf{Figure S9. Temperature characteristics of the piezoresistive
sensor.} a) \emph{I-V} curves of the sensor at different temperatures
under 200 g pressure/weight. b) \emph{I-V} curves of the sensor at
different temperatures under 500 g pressure/weight.

Figure S9 shows the temperature characteristics of the piezoresistive
sensor. It can be found that the output resistance of the piezoresistive
sensor will increase when the temperature increases under fixed pressure
(200 g or 500 g), implying that this sensor has a thermal shift issue.
This issue may be avoided by hardware compensation circuit, such as
compensation circuit of self-balancing
bridge\textsuperscript{{[}1{]}}and operational amplifier compensation
circuit.\textsuperscript{{[}2{]}}\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image21/image21}

\end{center}
\end{figure}

\textbf{Figure S10.} The circuit diagram of the recognition of braille
character in Figure 4e.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image22/image22}

\end{center}
\end{figure}

\textbf{Figure S11. Cycle-to-cycle variation of the
VO\textsubscript{2}memristor under different temperatures.} a-l)
\emph{I-V} characteristics of the VO\textsubscript{2} device in 50
repeated cycles under different temperatures (284-306 K). m) Cumulative
plots of \emph{V} \textsubscript{th} in the 50 repeated cycles. n)
Cumulative plots of \emph{V} \textsubscript{hold} in the 50 repeated
cycles.

Figure S11a-l show the \emph{I-V} characteristics of the
VO\textsubscript{2} device in 50 repeated cycles under different
temperatures, showing excellent cycle-to-cycle uniformity under each
temperature. The cycle-to-cycle fluctuations in\emph{V}
\textsubscript{th} and \emph{V} \textsubscript{hold} are further plotted
in Figure S11m,n, which once again demonstrates very low cycle-to-cycle
variation.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image23/image23}

\end{center}
\end{figure}

\selectlanguage{ngerman}\textbf{Figure S12. The I-V characteristics of
VO\textsubscript{2}memristor at 0 °C and 35 °C.} a) \emph{I-V}
characteristics at 35 °C. b)\emph{I-V} characteristics at 0 °C.

The lowest and the highest temperature that the
VO\textsubscript{2}device can operate are shown in Figure S12. When the
temperature is greater than 35 °C, the device has almost no stable
threshold switching (TS) characteristics (Figure S12a), so the maximum
working temperature of this VO\textsubscript{2} device cannot exceed 35
°C. When the temperature is lower than 0 °C (the lowest temperature that
the test equipment can be lowered to), the device still has stable TS
characteristics (Figure S12b), so the minimum operating temperature of
this device is less than 0 °C.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image24/image24}

\end{center}
\end{figure}

\textbf{Figure S13. The entire system for testing haptic-temperature
fusion.} a) The entire testing system. b) The probe station used for
testing VO\textsubscript{2} memristor with temperature control system.
c) Temperature control platform. d) The piezoresistive sensors connected
in series. e) The oscilloscope for measurement of the output signal.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image25/image25}

\end{center}
\end{figure}

\textbf{Figure S14.} The neuronal response under the different pressures
and temperatures.\selectlanguage{english}
\begin{figure}[H]
\begin{center}
\includegraphics[width=0.70\columnwidth]{figures/image26/image26}

\end{center}
\end{figure}

\textbf{Figure S15.} The \emph{V} \textsubscript{th} and\emph{V}
\textsubscript{hold} of VO\textsubscript{2} memristor with different
channel lengths.



Rich media available at \url{https://youtu.be/4xLMAH1yJjs}

\textbf{Supplementary Video 1} : With convex patterns on both the left
and the right (that is, both sensors have pressure by applying 100 g)

\par\null

Rich media available at \url{https://youtu.be/T8e6saQalmU}

\textbf{Supplementary Video 2} : With convex pattern only on the left
(that is, the left sensor has pressure by applying 100 g, but the right
has no pressure))

\par\null

Rich media available at \url{https://youtu.be/RhAhtFgMvMw}

\textbf{Supplementary Video 3} : With convex pattern only on the right
(that is, the right sensor has pressure by applying 100 g, but the left
has no pressure)

\par\null

Rich media available at \url{https://youtu.be/mTPXXIlp7NQ}

\textbf{Supplementary Video 4} : The haptic-temperature fusion under 100
g \& 27 \selectlanguage{ngerman}°C

\par\null

Rich media available at \url{https://youtu.be/Y3tiSgIMUJQ}

\textbf{Supplementary Video 5} : The haptic-temperature fusion under 200
g \& 17 °C

\par\null

Rich media available at \url{https://youtu.be/YQ\_rK4K\_Th8}

\textbf{Supplementary Video 6} : The haptic-temperature fusion under 200
g \& 32 °C

\textbf{References:}

{[}1{]} J. Bryzek, \emph{Sens. Actuator A Phys} . \textbf{1996} , 56,
1-9.

{[}2{]} Y. Sun, X. Sun, B. Sun, Q. Meng, \emph{Sens. Actuator A
Phys.}\textbf{1997} , 58, 249.

\selectlanguage{english}
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