3.3. Defect density and doping impacts onthe absorber layer
According to SRH recombination supervisedthe present FA-based device. It is essentially caused byhuge defect density due to compactfilm features [8, 9, 25,]. This type of recombination, carriers in the bands are recombined respectively.Zeetal. [10, 11], the diffusion and less recombination are spotted with an increase in carriers lifetime and a decrease in defect density. This is the hint to advance PSC for this present work. For the proper doping metallic ion,Kang et.al reported [12, 26, and 27]. Variation of defect density (1E+12 – 1E+20) for the absorber materials. The resultant parameter is observed Jsc( 29.61 mA/cm2), Voc(0.7821 V), Fill Factor (78.14%) are slight increases but the important and crucial parameter is PCE 18.10% has been obtained the concentration of defect density at 1020in the absorber. The observed result is shown in figure 6.
Doping is a very effect on the acting data. It can’t everbe reduced when the reaction is in the process since the doping may not the applied process. In this case tin-based cell the oxidation of Sn-2 is detected due to air[13,14,22,23].If weincrease the doping there are two possible things one is an interface and the other one is inside the layers. As per the result, these mechanism increase in the recombination of the carriers at this present work, we put the different thedoping value(1012 -1018) of the absorber and the obtained result is 18.10% are attained the resultant details are shown in figure 7.