3.2. Effect of change in Thickness of the HTL and ETL layers
In this work, we have done a lot of trial methods and we attain Cu2O at 400 nm and TiO2 at 100nm thickness of the ETL and HTL layer are respectively. The variations in HTL thickness (100-400 nm) and shown in figure 5 (Voc, Jsc, FF%, PCE%). The resultant details are as follows, the Voc (0.783-0.782)V slightly decreased, Jsc (29.63-29.37)mA/cm2 slightly decreased, (76.44-78.55) FF% increased,for that reason the device attains 18.00 % of PCE. Theobserved getting results are shown in figure 5(a). Simultaneously we change the thickness of the ETL the observer result are given and shown in 5(b).
Now we improve the actdata over the absorber layer is different at the adjusted thickness of ETL (100nm). The simulation work for TiO2 (ETL) are taken from 100-350 nm and we confirm 100nm thickness of ETL layer is good for our present work through the results obtained.We construct the cell device for our present work the obtain results are Voc (0.782), Jsc(29.55)mA/cm2, FF (78.14%) and the PCE is 18.06%.