3.3. Defect density and doping impacts onthe absorber layer
According to SRH recombination supervisedthe present FA-based device. It
is essentially caused byhuge defect density due to compactfilm features
[8, 9, 25,]. This type of recombination, carriers in the bands are
recombined respectively.Zeetal. [10, 11], the diffusion and less
recombination are spotted with an increase in carriers lifetime and a
decrease in defect density. This is the hint to advance PSC for this
present work. For the proper doping metallic ion,Kang et.al reported
[12, 26, and 27]. Variation of defect density (1E+12 – 1E+20) for
the absorber materials. The resultant parameter is observed Jsc( 29.61
mA/cm2), Voc(0.7821 V), Fill Factor (78.14%) are
slight increases but the important and crucial parameter is PCE 18.10%
has been obtained the concentration of defect density at
1020in the absorber. The observed result is shown in
figure 6.
Doping is a very effect on the acting data. It can’t everbe reduced when
the reaction is in the process since the doping may not the applied
process. In this case tin-based cell the oxidation of Sn-2 is detected
due to air[13,14,22,23].If weincrease the doping there are two
possible things one is an interface and the other one is inside the
layers. As per the result, these mechanism increase in the recombination
of the carriers at this present work, we put the different thedoping
value(1012 -1018) of the absorber
and the obtained result is 18.10% are attained the resultant details
are shown in figure 7.