[Describe here all the experimental procedures and/or methods adopted to collect your data. The description should be complete enough to enable someone else to repeat your work.]
The cross-point array of densely arranged analog synapses used for producing VMM results for the inputs discussed in this article represents one of the layers of the neural networks. Identification of the outcome and communications between the arrays is typically conducted via the silicon-based CMOS neuron circuit by converting the weighted sum, in analog manner, to digital bits or spikes. It is discovered that a crucial function of the neuronal device is to turn on and off depending on the inputs, similar to the switch element. Fortunately, the selector serving as the two-terminal switch has been intensively studied and developed for constructing large memory arrays and stacking them in three dimensions.
[107] Based on a particular
Vth, the current difference of off-state (
Roff) and on-state (
Ron) of the selector occurred because of several orders of magnitude. This threshold-switching behavior has been demonstrated in Mott insulators such as VO
2 and NbO
2 that are driven using a metal–insulator transition (MIT) mechanism.
[108] Various binary, ternary, and quaternary chalcogenide systems also exhibited the current response known as ovonic threshold switching (OTS) due to a lone-pair electrons in the chalcogen atoms.
[109] Results
[Present here your key results.]
Discussion
[Discuss here your results in light of current knowledge.]
Conclusion
[Summarize here key points in your findings along with the implications of your study.]
Acknowledgements
This work was supported by the National Research Foundation (NRF) grant funded by the Korea government (MSIT) (NRF-2020M3F3A2A01081775 and NRF-2021R1C1C1003261).
Conflict of interest
The authors declare no conflict of interest.
Supporting Information