Silicon nitride is a material of choice for making chips due to. It is thus very important that its properties are well known. As of 2019, all nonlinear effects have been reported in this material except stimulated Brillouin scattering. Here, by combining good fabrication with sophisticated measurement techniques, we report for the first time measurement of stimulated Brillouin scattering in silicon nitride chip. The measured intrinsic peak gain is xx m/W, thus 250 times smaller than for silica. The measured electrostrictive coefficient p12 is xx, thus 250 times smaller than for silica.