This paper reports a systematic theoretical study on the microwave noise performance of InAs based dual quantum well double gate high-electron mobility transistor (DWDG-HEMT). The dual quantum well HEMT devised for this study shows a prominent small signal analog/RF and noise performance. The results on 30 nm gate length device gives an enhancement mode operation with threshold voltage (VT) of 0.146 V, high transconductance of 4.77 S/mm along with cut-off frequency (fT) of 810 GHz and maximum oscillation frequency (fmax) of 900 GHz at Vds = 0.5 V. The high-frequency noise estimation of this device is obtained by gate and drain noise spectral densities which are evaluated by utilizing a Green’s function method under varying bias conditions. This device show a minimum noise figure (NFmin) of 1.62 dB in combination with equivalent noise resistance of 972 Ω at 810 GHz at Vgs = 0.6 V and Vds = 0.5 V which is relatively low and is suitable for LNA design for high frequency applications. This study shows that InAs HEMT with dual quantum well structure is much suitable for applications in need of higher frequency and low noise.
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