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Journal Of Electronic Materials Template
  • Carlos del Cañizo
Carlos del Cañizo
Universidad Politécnica de Madrid
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Abstract

We have studied the deposition of a-Si:H on c-Si substrates by plasma-enhanced chemical vapor deposition (PECVD) using radiofrequency (RF) at 13.56 MHz. Key parameters of the growth, including substrate temperature, RF power, and gas flow ratios have been optimized with regard to homogeneity, sheet resistance, carrier lifetime and optical properties of the resulting layer structure. Excellent surface passivation of n-type c-Si wafers has been achieved thereby, with experimental values of surface recombination velocity as low as 12.9 cm/s.