The technique of inspecting and measurement of the surface without touching the surface has been widely used in the semiconductor industry and research of the science field.The Optical profiler is one of the tool have been used to measurement of surface which use the methodology technique to measure the surface of the wafer without touching the surface using white laser light technology .In a decade, the engineers and scientists have been researching a new Metrology (methods) to measure with less possible uncertainties used white laser in optical profile.At the Washington State University Vancouver the student of electrical engineer major has the opportunity to do experiment using optical profile to measure the surface. The experiment condition in the clean room with Class-100 and nano electronic photonics device as the tool. The goal of this experiment to understand uncertainty of optical profile , we will provide a brief testing surface Silicon oxide (SiO2) .The measurement will determine the uncertainty of optical profile using the silicon oxidation without treatments as the sample surface to test . The process will test at one location on the surface with four of the tests to get the roughness of height of the spot 100x100 micro meter on a surface of SiO2. The deviation of the four tests height are 274.3 nm with comparison of the the operation manual optical profiler measurement is 160 nm with VSI. The data show the error height deviation on the surface and manual process error 40 percent.

Keyword: accuracy, optical critical dimension metrology, uncertainty analysis

Optical profiler NT1100


Optical profile using the white light has been used a lot in the semiconductor industry to measure the surface and profile of the surface of wafer SiO2. However, during the focus on the lithography scaling of light of the equipment, the measurement surface of topography will increase the uncertainty of measurement and technology white light in increase will reach a maximum fundamental limit(Geerlings 2003). As the Operations manual show, the uncertainty of the equipment will be +-3 nm in vertical shift interference (VSI) with vertical range, and Phase Shift interference (PSI) is +- 10 angstroms with vertical range 160 nm [manual of Optical profile]. The uncertainty increase in measurement will affect a lot of the thin film development, electrical characteristic of device such as Capacitor, Resistor, inductor. Also, more importantly it will affect the dynamic mechanical flow in the surface[(Akter)]. The measurement surface will have a lot of impact in the device function. In this experiment, we will have the measurement four test with the same location and the same piece of silicon oxide. The silicon oxidation have not been clean and treatment with any c