Electron beam synthesis of Au nanoparticles (NPs) in Si₃N₄/Si thin films is studied in terms of electron irradiation in the TEM at energies of 80, 120, 160 and 200 keV. The samples were characterized by Rutherford Backscattering Spectrometry (RBS) and Transmission Electron Microscopy (TEM). Si₃N₄/Si samples implanted with Au ions submitted to the lowest energy irradiation process show the growth of a dense array of d_m≈ 1.3 nm Au NPs within the film. In the case of Au implanted Si₃N₄ samples irradiated with electrons at 120, 160 and 200 keV, we observe a similar behavior in the growth of NPs. The results are discussed based on irradiation induced atomic diffusivity and sputtering arguments as well as on the energies needed to trigger the displacement and rearrangement of atoms.