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An Improved Noise Model of InP HEMT for Millimeter Wave Application
  • +1
  • Zhichun Li,
  • Yuanting Lv,
  • Ao Zhang,
  • Jianjun Gao
Zhichun Li
East China Normal University
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Yuanting Lv
East China Normal University
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Ao Zhang
Nantong University
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Jianjun Gao
East China Normal University

Corresponding Author:[email protected]

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Abstract

A new temperature noise model, including the influence of gate-drain series resistance Rgd on the noise performance for an InP HEMT, is presented in this paper. An equivalent temperature Tgd of Rgd has been taken into account based on pospieszalski’s noise model. The corresponding extraction procedure of noise parameters is given. Good correlation between the simulated and measured noise parameters in the frequency range of 8GHz~50GHz for a wide range of bias points verify the validity of the improved noise model.
01 Feb 2024Submitted to International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
01 Feb 2024Assigned to Editor
01 Feb 2024Submission Checks Completed
01 Feb 2024Review(s) Completed, Editorial Evaluation Pending
02 Feb 2024Reviewer(s) Assigned