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Gate Misalignment Effect on Electrical Characteristics and Comparison of Analog/RF Performance Parameters of Charge Plasma-Based Triple Metal Dual Gate Vertical TFET
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  • Rajesh Agarwal,
  • Rohit R. Kumbhar,
  • Harshit Agarwal,
  • Vibhav Lekhi,
  • Upasana Nandi,
  • girish wadhwa
Rajesh Agarwal
SRM Institute of Science and Technology (Deemed to be University) Research Kattankulathur

Corresponding Author:[email protected]

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Rohit R. Kumbhar
SRM Institute of Science and Technology (Deemed to be University) Research Kattankulathur
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Harshit Agarwal
SRM Institute of Science and Technology (Deemed to be University) Research Kattankulathur
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Vibhav Lekhi
SRM Institute of Science and Technology (Deemed to be University) Research Kattankulathur
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Upasana Nandi
SRM Institute of Science and Technology (Deemed to be University) Research Kattankulathur
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girish wadhwa
Chitkara University
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Abstract

During the fabrication of a double gate TFET structure, there is a high chance of gate misalignment which may affect the sensitivity of the sensors. In this paper, we investigated various effects of gate misalignment and switching characteristics of charge plasma-based triple metal double gate vertical TFET on electrical characteristics. We observed effects on analog/RF parameters on the proposed structure such as transconductance (g m), output conductance (g ds), intrinsic gain (A VO), total gate capacitance (C GG), and cut-off frequency (f T), along with threshold voltage (V TH) and sub-threshold slope (SS). The work focuses on the investigation of these parameters in three scenarios of gate misalignment: towards the drain, towards the source, and towards the drain and source with different probable percentages of misalignment. The results are analyzed by considering SiO 2 and HfO 2 as gate oxide materials.