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Threshold Voltage Extraction Using Unconventional Conductance-Voltage Method for Nano Organic/Oxide Thin Film Transistors: Comparative Study of P and N-Type Devices
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  • Rajesh Agarwal,
  • Illa Pream Krishna,
  • Thathamsetty Viswa Tej,
  • Manchikanti Manideep
Rajesh Agarwal
SRM Institute of Science and Technology (Deemed to be University) Research Kattankulathur

Corresponding Author:[email protected]

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Illa Pream Krishna
SRM Institute of Science and Technology (Deemed to be University) Research Kattankulathur
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Thathamsetty Viswa Tej
SRM Institute of Science and Technology (Deemed to be University) Research Kattankulathur
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Manchikanti Manideep
SRM Institute of Science and Technology (Deemed to be University) Research Kattankulathur
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Abstract

Threshold voltage (VTH) is a crucial parameter for the proper functioning of a transistor. In this study, we propose an alternative method, called the conductance-voltage method, to extract the threshold voltage. This method uses the change in drain current (IDS) with applied gate voltage (VGS) as the device transition from the weak accumulation to the strong accumulation mode of operation to estimate the threshold voltage. This method was then applied to pentacene-based and amorphous indium-gallium-zinc-oxide (a-IGZO)-based thin-film transistors (TFTs) in their linear region of operation using two-dimensional simulations. The results were promising, and this new method provides a valuable tool for optimizing the performance of Complementary Organic/Oxide TFTs for future applications.