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Laser Photovoltaic Effect on InGaN / GaN MQWs Structure Photocells
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  • Hengsheng Shan,
  • Shengwei Liu,
  • Zhiyu Lin,
  • Xiaoya Li
Hengsheng Shan
Materials Institute of Atomic and Molecular Science

Corresponding Author:[email protected]

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Shengwei Liu
Jiangsu Institute of Advanced Semiconductors Ltd
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Zhiyu Lin
Jiangsu Institute of Advanced Semiconductors Ltd
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Xiaoya Li
Northwest University School of Information Science and Technology
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Abstract

In this paper, the laser photovoltaic effect of InGaN photocells under 405 nm, 450 nm, and 488 nm laser irradiation was studied. It found that the photovoltaic conversion efficiency of InGaN photocells gradually decreases with the increase of laser wavelength. Moreover, compared with traditional photocells, the conversion efficiency of the InGaN/GaN MQWs (Multiple Quantum Wells, MQWs) structure photocells with AlGaN insertion layer structure under 405nm laser irradiation increased from 10.15% to 15.32%, an increase of 50.94%. It indicates that with the increase of incident wavelength, AlGaN structured materials have lower transmittance through transmission curve testing; XRD characterization and PL analysis also supports the results that the material with inserted AlGaN structure has a steeper interface quality and higher active region crystal quality. Finally, the EQE (External Quantum Efficiency, EQE) characterization of the device also confirms that AlGaN structured devices have strong light absorption ability and high EQE, which leads to an improvement in device conversion efficiency. This study can provide an experimental basis for the application of InGaN laser batteries in the field of wireless energy transmission.