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A mm-Wave Radio Frequency Power Amplifier based on Transformers Coupling and 2 nd Harmonic Termination Network using 130 nm CMOS Technology for 5G Applications
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  • Mina Kamal,
  • Marwa Mansour,
  • Sherif Hekal,
  • Abdelhalim Zekry
Mina Kamal
October 6 University

Corresponding Author:[email protected]

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Marwa Mansour
Electronics Research Institute
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Sherif Hekal
Benha University Faculty of Engineering at Shoubra
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Abdelhalim Zekry
Ain Shams University Faculty of Engineering
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An efficient and linear power amplifier (PA) for millimeter wave applications using a 130nm CMOS process is presented in this paper. The proposed PA uses transformer coupling for output, inter-stage, and input matching and also utilizes inter-stage inductors to boost RF achievement. The Ansoft high-frequency structure simulator (HFSS) is used to analyze and design the coupling transformers and inter-stage matching inductors to achieve a high coupling coefficient and quality factor over the frequency range of 19 to 29 GHz. The 2 nd harmonic termination networks are connected at each stage of the proposed power amplifier to enhance the gain and efficiency. The suggested radio frequency power amplifier consists of three stages, the input stage operates in class-B operation to increase the efficiency without an influence on the DC power consumption, while the driver and power stages work in class-AB to improve the RF output power. Also, the power stage is a parallel combination of class-B and class-AB to improve the one-dB compression point and enhance the linearity. The proposed RF power amplifier operates in the frequency range from 19 to 29 GHz. The suggested PA achieves a saturated output power of 15.1 dBm, a maximum power added efficiency (PAE) of 19.35 %, and a peak power gain of 22.72 dB. Moreover, the peak output 1-dB compression point for the proposed power amplifier is 13.1 dBm and consumes a DC power of 98.09 mW. Lastly, the die and overall areas of the suggested power amplifier are 0.4 mm 2 and 0.67 mm 2, respectively.