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Enhancing Photodetection Efficiency of CMOS SiPMs using Virtual Guard Rings in a Standard 0.35 μm Process
  • Jonathan Preitnacher,
  • Sergei Ageev,
  • Walter Hansch
Jonathan Preitnacher
Bundeswehr University Munich

Corresponding Author:[email protected]

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Sergei Ageev
MEPhI Faculty of Experimental and Theoretical Physics
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Walter Hansch
Bundeswehr University Munich
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In this letter, we introduce a design of virtual guarded SiPMs fabricated in a standard 0.35 μm standard complementary metal oxide semiconductor (CMOS) process. We compare the performance of these virtual guarded cells (VGC) to that of conventional cells with real guard rings, referred to as physical guarded cells (PGC). Specifically, we evaluate the photon detection efficiency (PDE) of both types of SiPMs. Our results demonstrate that the VGC SiPM outperforms the PGC SiPM, exhibiting a true PDE of (22.5 ± 0.5) %, which is significantly higher than the PDE of (10.9 ± 0.3) % obtained for the PGC SiPM. The superior PDE of the VGC SiPM is attributed to a larger active or photosensitive area due to the virtual guard rings and a thinner n-layer in the photosensitive region.
22 May 2023Submitted to Electronics Letters
24 May 2023Submission Checks Completed
24 May 2023Assigned to Editor
25 May 2023Reviewer(s) Assigned
29 Jun 2023Review(s) Completed, Editorial Evaluation Pending
07 Jul 2023Editorial Decision: Revise Major
16 Aug 20231st Revision Received
18 Aug 2023Submission Checks Completed
18 Aug 2023Assigned to Editor
18 Aug 2023Review(s) Completed, Editorial Evaluation Pending
18 Aug 2023Editorial Decision: Accept