A Sub-nW 100 ppm/°C Self-Biased Voltage Reference Circuit for IOT
Applications.
Abstract
A sub-nW, self-biased voltage reference circuit is developed to provide
bias signals for use in Internet-of-Things (IOT) applications, taking
use of the sub-threshold region operation MOSFETs. Circuit is evaluated
by simulation with 180nm SCL’s CMOS device parameters and 1.8 V voltage
supply and from temperature -40˚C to 125˚C. Simulation shows that a
temperature sensitivity of designed voltage reference is less than 100
ppm/°C. The size of the proposed design without IO pads is 30 µm × 30 µm
and consumes power less than 50 nW.