loading page

Dynamic on-state resistance instability characterization of a Multi-chip-GaN MIS-HEMTs Cascode power module
  • +1
  • Surya Elangovan,
  • Stone Cheng,
  • Wen Jang,
  • Edward Yi Chang
Surya Elangovan
National Yang Ming Chiao Tung University

Corresponding Author:arulsurya.en08@nycu.edu.tw

Author Profile
Stone Cheng
National Yang Ming Chiao Tung University
Author Profile
Wen Jang
National Yang Ming Chiao Tung University
Author Profile
Edward Yi Chang
National Yang Ming Chiao Tung University Department of Material Science and Engineering
Author Profile


The dynamic on-state resistance instability of a high-current cascode multi-GaN-chip power module under high frequency and voltage switching conditions is demonstrated in this paper. The presented double pulse test (DPT) topology is utilized to evaluate switching dependencies on voltage, current, and frequency, showing its versatility in investigating the switching instability of the device. The extended defects in the buffer layer resulted in a decrease in dynamic on-state resistance (RDS-ON) under hard switching conditions. Despite this, no noticeable RDS-ON degradation occurs under harsh switching conditions due to electron de-trapping. This study comprehensively analyzes the dynamic stability of a multi-GaN-chip cascode module with devices.
04 Jan 2023Submitted to Electronics Letters
04 Jan 2023Assigned to Editor
04 Jan 2023Submission Checks Completed
16 Jan 2023Reviewer(s) Assigned