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Investigation of DC and RF Characteristics of Spacer Layer Thickness Engineered Recessed Gate and Field-Plated III-Nitride Nano-HEMT on β-Ga 2 O 3 Substrate
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  • Trupti Lenka,
  • G. Purnachandra Rao,
  • N. El. I. Boukortt,
  • Hieu Nguyen
Trupti Lenka
National Institute of Technology Silchar

Corresponding Author:[email protected]

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G. Purnachandra Rao
National Institute of Technology Silchar
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N. El. I. Boukortt
Kuwait College of Science and Technology
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Hieu Nguyen
New Jersey Institute of Technology
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In this article, the performance analysis of recessed gate and field-plated III-nitride Nano-HEMT (High Electron Mobility Transistor) developed on β-Ga 2O 3 substrate with and without AlN spacer layer is studied. The two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface is crucial in changing the characteristics of AlGaN/GaN HEMTs. The different transport, DC, and AC characteristics of the proposed III-nitride HEMT with spacer layer are numerically simulated and compared with the HEMT without spacer layer. The major findings of this research demonstrate that the AlN spacer layers large band off set, strong polarisation field, and high barrier allow the increased concentration of 2DEG, when it is introduced between AlGaN/GaN interface. Furthermore, the AlN layer moves the 2DEG distribution shifts from the surface, which diminishes interface scattering. Further, AlN thickness variation influences the polarisation field and conduction band offset, which impacts the concentration and mobility of 2DEG.
01 Dec 2022Submitted to International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
01 Dec 2022Submission Checks Completed
01 Dec 2022Assigned to Editor
01 Dec 2022Review(s) Completed, Editorial Evaluation Pending
02 Dec 2022Reviewer(s) Assigned
31 Jan 2023Editorial Decision: Revise Major
13 Mar 20231st Revision Received
13 Mar 2023Submission Checks Completed
13 Mar 2023Assigned to Editor
13 Mar 2023Review(s) Completed, Editorial Evaluation Pending
16 Mar 2023Reviewer(s) Assigned
26 May 2023Editorial Decision: Accept