loading page

A Novel 4H-SiC/Si Heterojunction IGBT Achieving Low Turn-off Loss
  • +6
  • Erjun wang,
  • Xiaoli Tian,
  • Jiang Lu,
  • Xinhua Wang,
  • Chengzhan Li,
  • Yun Bai,
  • Chengyue Yang,
  • Yidan Tang,
  • Xinyu Liu
Erjun wang
CAS Institute of Microelectronics

Corresponding Author:[email protected]

Author Profile
Xiaoli Tian
CAS Institute of Microelectronics
Author Profile
Jiang Lu
CAS Institute of Microelectronics
Author Profile
Xinhua Wang
CAS Institute of Microelectronics
Author Profile
Chengzhan Li
Zhuzhou CRRC Times Semiconductor Co
Author Profile
Yun Bai
CAS Institute of Microelectronics
Author Profile
Chengyue Yang
CAS Institute of Microelectronics
Author Profile
Yidan Tang
CAS Institute of Microelectronics
Author Profile
Xinyu Liu
Institute of Microelectronics pf Chinese Academy of Sciences
Author Profile

Abstract

In this paper, a novel silicon carbide (SiC) insulated gate bipolar transistor (IGBT) with a 4H-SiC/Si heterojunction in buffer layer (HBL) is proposed to improve the turn-off characteristic. Compared with the conventional 4H-SiC IGBT, the polysilicon region is integrated in the buffer layer to form a natural potential well, which can help to store excessive carriers at the turn-off process. Simulation results indicate that the turn-off time (toff) is reduced from 325 ns to 232 ns and the turn-off loss (Eoff) is decreased from 2.619 mJ to 1.375 mJ, while a similar on-state ability is maintained. That means the reduction of 28.6% toff and 47.5% Eoff can be achieved. Based on the structure benefits, a better trade-off between Eoff-VF is also achieved for the proposed HBL-IGBT. Moreover, the heterojunction of HBL-IGBT can be formed with the plasma active direct bonding technology, which is compatible with the conventional fabrication process.