Abstract
The Silicon Carbide (SiC) MOSFET inverter welding power supply produces
high rates of voltage and current change (dv/dt and di/dt) as well as a
reverse recovery current transient rate during the high-frequency and
high-voltage switching process. This causes a serious crosstalk issue
and affects the driving reliability of SiC MOSFETs. This research
creates a half-bridge crosstalk model based on the properties of SiC
MOSFET power devices and an inverter welding power supply. Further
analysis is done on the crosstalk mechanism of the SiC MOSFETs used in
the half-bridge application as well as the impact of the driving
parameters on the switching process. A SiC MOSFET drive circuit with
protection functions is designed. By constructing a double pulse
circuit, the SiC MOSFET driving circuit’s functionality and its driving
parameters are assessed. The driving waveform of the SiC MOSFET is
stable and within the expected range in the SiC MOSFET inverter welding
power supply. The experimental findings demonstrate the viability of the
driving circuit that was created. SiC MOSFETs can operate consistently
and produce an excellent switching waveform.