Wavelength-stabilized ns-pulsed 2.2 kW diode laser bar with multiple
active regions and tunnel junctions
The improvement of the performance of a distributed Bragg reflector
laser bar emitting near 905 nm through the use of multiple epitaxially
stacked active regions and tunnel junctions is reported. The bar
consisting of 48 emitters (each having an aperture of 50 μm) emits an
optical power of 2.2 kW in 8 ns long pulses at an injection current of
1.1 kA. This corresponds to an almost threefold increase of the pulse
power compared to a bar with lasers having only a single active region.
Due to the integrated surface Bragg grating, the bar exhibits a narrow
spectral bandwidth of about 0.3 nm and a thermal tuning of only 68 pm/K.