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220 GHz SPST switch based on PIN diode with low insertion loss and high isolation
  • +4
  • Xiaolin Hao,
  • Guodong Gu,
  • Shixiong Liang,
  • Yuanjie Lv,
  • Xubo Song,
  • Lisen Zhang,
  • Feng Zhi Hong
Xiaolin Hao
Hebei Semiconductor Research Institute

Corresponding Author:[email protected]

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Guodong Gu
Hebei Semiconductor Research Institute
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Shixiong Liang
Hebei Semiconductor Research Institute
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Yuanjie Lv
Hebei Semiconductor Research Institute
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Xubo Song
Hebei Semiconductor Research Institute
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Lisen Zhang
Hebei Semiconductor Research Institute
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Feng Zhi Hong
Hebei Semiconductor Research Institute
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Abstract

In order to address the issue of 220 GHz receiver protection, a single-pole single-throw (SPST) switch based on GaAs PIN diodes is introduced in this research. The PIN diode with an I layer thickness of 400 nm and a cut-off frequency over 1.5THz was created in order to enable the SPST switch to operate in the terahertz frequency range. Therefore, a 220 GHz quasi-MMIC SPST switch was designed using GaAs PIN diodes and a 50 μm thin-film quartz foundry. The measurement reveals that the isolation is > 29 dB, insertion loss is < 3.2 dB in the frequency range of 220 GHz to 230 GHz and IP1dB is 17 dBm at 220 GHz.