Abstract
In this work, we successfully demonstrated
In0.53Ga0.47As/InAs/In0.53Ga0.47As
composite channel metamorphic high electron mobility transistors
(MHEMTs) on GaAs substrate for the first time. The fabricated MHEMTs
with 100 nm gate length exhibited excellent DC and logic characteristics
such as VT = -0.13V, gm,max = 949 mS/mm,
subthreshold swing (SS) = 84 mV/dec, drain-induced barrier lowering
(DIBL) = 89mV/V, and Ion/Ioff ratio =
9.8 X 103 at VDS = 0.5 V. In addition,
the device exhibited excellent high frequency characteristics such as
fT/fmax = 261/304 GHz at
VDS = 0.5 V and these high frequency characteristics is
the well-balanced demonstration of fT and
fmax in the MHEMT structure on GaAs substrate.