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High-Performance In0.53Ga0.47As/InAs/In0.53Ga0.47As Composite Channel Metamorphic HEMTs (MHEMTs) on GaAs Substrate
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  • Seung Heon Shin,
  • Jae-Phil Shim,
  • Hyunchul Jang,
  • Jae-Hyung Jang
Seung Heon Shin
Korea Polytechnics

Corresponding Author:seungheon80@gmail.com

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Jae-Phil Shim
Korea Advanced Nano Fab Center
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Hyunchul Jang
Korea Advanced Nano Fab Center
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Jae-Hyung Jang
Korea Institute of Energy Technology
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In this work, we successfully demonstrated In0.53Ga0.47As/InAs/In0.53Ga0.47As composite channel metamorphic high electron mobility transistors (MHEMTs) on GaAs substrate for the first time. The fabricated MHEMTs with 100 nm gate length exhibited excellent DC and logic characteristics such as VT = -0.13V, gm,max = 949 mS/mm, subthreshold swing (SS) = 84 mV/dec, drain-induced barrier lowering (DIBL) = 89mV/V, and Ion/Ioff ratio = 9.8 X 103 at VDS = 0.5 V. In addition, the device exhibited excellent high frequency characteristics such as fT/fmax = 261/304 GHz at VDS = 0.5 V and these high frequency characteristics is the well-balanced demonstration of fT and fmax in the MHEMT structure on GaAs substrate.